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Gate driver duo optimizes GaN FET design
A two-chip set from Allegro delivers isolated gate drive for e-mode GaN FETs in multiple applications and topologies. Comprising the AHV85000 and AHV85040, the pair of ICs is the third product in the...
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SiC MOSFETs reside in 7-pin D2Pak
Nexperia now offers 1200-V SiC MOSFETs in 7-pin D2Pak (TO-263-7) plastic packages with on-resistance values of 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. With the release of the NSF0xx120D7A0 series of SiC...
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Dual-channel gate drivers fit IGBT modules
Scale-iFlex XLT plug-and-play dual-channel gate drivers from Power Integrations operate IGBT modules with blocking voltages of up to 2.3 kV. These ready-to-use drivers work with LV100 (Mitsubishi), XHP...
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Microchip grows rad-tolerant MCU portfolio
Offering high radiation tolerance, the SAMD21RT MCU from Microchip is capable of operating in the harsh environments found in space. The device, which is based on a 32-bit Arm Cortex-M0+ core running...
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Demo board provides dual-motor control
ST’s demonstration board controls two three-phase brushless motors using an onboard STSPIN32G4 controller with an embedded MCU. The controller’s integrated MCU is based on a 32-bit Arm Cortex-M4 core,...
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Why HBM memory and AI processors are happy together
High bandwidth memory (HBM) chips have become a game changer in artificial intelligence (AI) applications by efficiently handling complex algorithms with high memory requirements. They became a major...
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Single event upset and recovery
The effects of cosmic rays were once discussed in “Doubled-up MOSFETs“. The idea was that component redundancy, paired MOSFETs in that case, would allow one MOSFET to still function even if its partner...
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Samsung’s memory chip business: Trouble in paradise?
The week of 20 May 2024 has been quite eventful for Samsung’s semiconductor unit, the world’s largest producer of memory chips like DRAMs, SRAMs, NAND flash, and NOR flash. Early this week, an...
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Resurrecting a diminutive, elementary Arm-based PC
I’ll admit upfront that there’s more than a bit of irony in the topic I’m about to cover today. As I write these words on Saturday, April 20, Qualcomm is rumored to next week be giving the next public...
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What’s a “thermal jumper” do, anyway?
I’ve always been interested in simple-looking components which solve well-defined, clear, bounded problems. One carpentry example I encountered and used many years ago is formally known as a hanger...
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Microsoft’s Build 2024: Silicon and associated systems come to the fore
Microsoft’s yearly Build developer conference took place last Tuesday-Thursday, March 21-23 (as I write these words on Memorial Day), and was rife with AI-themed announcements spanning...
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Contactless electric bell on a gradient relay
The operation of a contactless electric bell is based on a change in the electrical resistance of a temperature-sensitive element (thermistor) when a finger approaches the bell button or upon contact...
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Has Malaysia’s ‘semiconductor moment’ finally arrived
Malaysia and Taiwan were among the early semiconductor outposts during the late 1960s when U.S. companies like Intel began to outsource their assembly and test operations to Asia. Over half a century,...
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RF amplifier series gains 300-W model
The latest addition to the R&S BBA300 family of RF amplifiers delivers output power of 300 W P1dB or software-adjustable saturation power up to 450 W. Operating at up to 6 GHz, the broadband...
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Board set kickstarts wireless charging design
A pair of 50-W Qi-compatible development boards from ST enables rapid wireless charging using the company’s ST Super Charge (STSC) protocol. The STEVAL-WBC2TX50 transmitter and STEVAL-WLC98RX receiver...
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Thin electrolytic capacitor achieves low ESR
Joining Murata’s ECAS series of polymer aluminum electrolytic capacitors is a device that boasts low equivalent series resistance (ESR) of 4.5 mΩ. This tiny capacitor, designated the...
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5G mMIMO predriver offers high gain
A massive MIMO (mMIMO) predriver from Qorvo, the QPA9822 provides gain of 39 dB at 3.5 GHz and output power of 28 dBm P1dB. The linear driver amplifier enables wideband 5G NR instantaneous signal...
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Infineon expands GaN HEMT lineup
Infineon is adding two more families of high and medium voltage GaN transistors to its portfolio of CoolGaN HEMTs spanning 40 V to 700 V. According to the company, this expansion will enable customers...
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Portable thermal anemometer hot-transistor bias compensation nulls battery...
All thermal anemometers work by inferring air speed from measurements of thermal impedance (Z) between a heated sensor and the surrounding air: Z = T / P (1) Where P is the power dissipated by...
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An O/S-fussy USB flash drive
Back at the beginning of last year, EDN published my dissection of a yellow-color ADATA UV128 16 GByte USB flash drive that for unknown reasons had died on me: At the time, I also showed you its...
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