Nexperia now offers 1200-V SiC MOSFETs in 7-pin D2Pak (TO-263-7) plastic packages with on-resistance values of 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. With the release of the NSF0xx120D7A0 series of SiC MOSFETs, the company is addressing the need for high-performance SiC switches in surface-mount packages like the D2Pak-7.
The N-channel devices can be used in various industrial applications, including electric vehicle charging, uninterruptible power supplies, photovoltaic inverters, and motor drives. Nexperia states its process technology ensures that its SiC MOSFETs offer industry-leading temperature stability. The parts’ nominal RDS(ON) value increases by only 38% over an operating temperature range of +25°C to +175°C. In addition, tight gate-source threshold voltage allows the discrete MOSFETs to offer balanced current-carrying performance when connected in parallel.
The MOSFET’s TO-263 single-ended surface-mount package has 7 leads with a 1.27-mm pitch and occupies a footprint area of 189.2 mm2. A Kelvin source pin speeds commutation and improves switching.
For more information about the NSF0xx120D7A0 series of SiC MOSFETs in the TO-263-7 package, click here.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
The post SiC MOSFETs reside in 7-pin D2Pak appeared first on EDN.