A two-chip set from Allegro delivers isolated gate drive for e-mode GaN FETs in multiple applications and topologies. Comprising the AHV85000 and AHV85040, the pair of ICs is the third product in the company’s high-voltage Power-Thru portfolio, transmitting both the PWM signal and bias power through a single external isolation transformer. This eliminates the need for an external auxiliary bias supply or high-side bootstrap.
Expanding on Allegro’s Power-Thru technology, the combo chipset offers the same benefits found in its existing gate drivers, but relocates the isolation transformer from internal to external. By doing so, the AHV85000 and AHV85040 afford greater design flexibility for isolation, power, and layout, as engineers can choose a transformer based on their design requirements. They are well-suited for use in clean energy applications, such as solar inverters and EV charging, as well as data center power supplies.
The AHV85000 and AHV85040 form the primary-side transmitter and secondary-side receiver of an isolated GaN FET gate driver. Together, they simplify system design and reduce EMI through reduced total common-mode capacitance. The chipset also enables the driving of a floating switch at any location in a switching power topology.
The AHV85000 and AHV85040 are sold as a two-chip set. Each chip comes in a 3×3-mm, 10-pin DFN surface-mount package. The parts are available through Allegro’s distributor network.
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