Clik here to view.
Sixteen new Gen 3 1200-V SiC Schottky diodes from Vishay increase the efficiency and reliability of switching power designs. Covering current ratings ranging from 5 A to 40 A, the SiC diodes feature a merged PiN Schottky (MPS) structure, with the backside thinned using laser annealing.
Image may be NSFW.
Clik here to view.
These Gen 3 SiC diodes exhibit a low capacitance charge as low as 28 nC and a minimal forward voltage drop of just 1.35 V. Moreover, with typical leakage currents as low as 2.5 µA at 25°C, they minimize conduction losses, ensuring high system efficiency even during light loads and idling.
Image may be NSFW.
Clik here to view.
Intended for use in harsh environments, the devices operate at temperatures of up to +175°C with forward surge ratings as high as 260 A. Typical applications include AC/DC power factor correction and DC/DC high-frequency output rectification in PSFB and LLC converters.
The Gen 3 1200-V SiC diodes come in a variety of though-hole and surface-mount packages. Samples and production quantities are available now, with lead times of 13 weeks.
Click here to access the datasheets of the 16 new devices, as well as other MPS diodes.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
The post SiC diode lineup spans 5 A to 40 A appeared first on EDN.
