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Taiwanese pure-play foundry WIN Semiconductors has announced the beta release of its robust mmWave GaN-on-SiC technology, NP12-0B. At the core of this platform is a 0.12-µm gate RF GaN HEMT process with enhancements for DC and RF ruggedness and die-level moisture resistance.
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Transistor improvements in NP12-0B boost ruggedness when operated under deep-saturation, high-compression pulsed and continuous-wave (CW) conditions. NP12-0B eliminates the pulse droop behavior observed in GaN HEMT power amplifiers. This improves the range and sensitivity of pulsed-mode radar systems. The Enhanced Moisture Ruggedness option ensures strong resistance to humidity in plastic packages.
NB12-0B supports full MMICs, enabling customers to develop compact pulsed or CW saturated power amplifiers for applications up to 50 GHz. The process is qualified for 28-V operation. It delivers saturated output power of 4.5 W/mm in the 29-GHz band, with 12-dB linear gain and over 40% power added efficiency.
The beta release of NP12-0B is now available for early access multi-project wafer (MPW) runs. Qualification testing is complete. Final modeling and PDK generation is expected to conclude in August 2024. The full production release is scheduled for late Q3 2024.
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