Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options. The additions address the demand for higher efficiency and compact designs across consumer, industrial, server/computing, and telecommunications markets. Nexperia’s portfolio includes both cascode and E-mode GaN FETs, available in a wide variety of packages, providing flexibility for diverse design needs.
The new offerings include 40-V bidirectional devices (RDS(on) <12 mΩ), designed for overvoltage protection, load switching, and low-voltage applications such as battery management systems in mobile devices and laptop computers. These devices provide critical support for applications requiring efficient and reliable switching.
Also featured are 100-V and 150-V devices (RDS(on) <7 mΩ), useful for synchronous rectification in power supplies for consumer devices, DC/DC converters in datacom and telecom equipment, photovoltaic micro-inverters, Class-D audio amplifiers, and motor control systems in e-bikes, forklifts, and light electric vehicles. The release also includes 700-V devices (RDS(on) >140 mΩ) for LED drivers and power factor correction (PFC) applications, along with 650-V devices (RDS(on) >350 mΩ) suitable for AC/DC converters, where slightly higher on-resistance is acceptable for the specific application.
To learn more about Nexperia’s E-mode GaN FETs, click here.
Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.
The post Broad GaN FET lineup eases design headaches appeared first on EDN.