Infineon is advancing industry-wide standardization by offering its CoolGaN Generation 3 (G3) transistors in silicon MOSFET packages. The IGD015S10S1 100-V transistor will be housed in a 5×6-mm routable QFN (RQFN) package, while the IGE033S08S1 80-V variant will come in a 3.3×3.3-mm RQFN package.
These two CoolGaN G3 transistors, compatible with industry-standard silicon MOSFET packages, enable easy multi-sourcing and complementary layouts for silicon-based designs. The 100-V IGD015S10S1 provides a typical on-resistance of 1.1 mΩ. The 80-V IGE033S08S1 has a typical on-resistance of 2.3 mΩ. Their new packages, combined with GaN technology, ensure low-resistance connections and minimal parasitics.
Infineon’s chip and package combination enhances robustness in thermal cycling and improves thermal conductivity. The larger exposed surface area and higher copper density aid in better heat distribution and dissipation.
Samples of the IGE033S08S1 and IGD015S10S1 GaN transistors in RQFN packages will be available in April 2025. For more information, click here.
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