Vishay has launched 16 SiC Schottky diodes with 650-V and 1200-V ratings in SOT-227 packages, enhancing efficiency in high-frequency applications. The devices offer, according to the manufacturer, the best trade-off between capacitive charge (QC) and forward voltage drop in their class.
The recently released components include dual diodes in parallel configuration with total forward current ratings ranging from 40 A to 240 A, along with single-phase bridge devices rated at 50 A and 90 A. The diodes feature a forward voltage drop as low as 1.36 V, reducing conduction losses and improving efficiency. They also offer better reverse recovery parameters than Si-based diodes, with virtually no recovery tail.
The SOT-227 package aids efficiency through improved thermal management and reduced parasitic inductance and resistance. The diodes’ low QC down to 56 nC enables high-speed switching, while their industry-standard package provides a drop-in replacement for competing solutions.
Samples and production quantities of the SiC Schottky diodes are available now, with lead times of 18 weeks. To access the datasheets for the dual-diode and single-phase bridge devices, click here.
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