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Kioxia and Nanya Technology have co-developed a type of 4F2 DRAM known as Oxide-Semiconductor Channel Transistor DRAM (OCTRAM). It features an oxide-semiconductor transistor that has both high ON current and ultra-low OFF current, enabling reduced power consumption across a wide range of applications, including AI, post-5G communication systems, and IoT products.
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Panoramic view of the OCTRAM.
OCTRAM seeks to deliver low-power DRAM by using an InGaZnO-based cylinder-shaped vertical transistor with ultra-low leakage. This 4F2 design adaptation, according to Kioxia, provides significantly higher memory density than conventional silicon-based 6F2 DRAM.
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ON and OFF current characteristics of InGaZnO transistor across configurations and structures.
The InGaZnO vertical transistor delivers a high ON current of over 15 μA per cell and an ultra-low OFF current below 1aA per cell, achieved through device and process optimization. In the OCTRAM design, the transistor is integrated on top of a high aspect ratio capacitor using a capacitor-first process. This setup helps separate the effects of the advanced capacitor process from the InGaZnO performance.
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