Navitas has developed a power supply unit (PSU) that is capable of producing 8.5 kW of output power with 98% efficiency. Aimed at AI and hyperscale data centers, the PSU achieves a power density of 84.6 W/in.3 through the use of both GaN and SiC MOSFETs.
The PSU provides a 54-V output and complies with Open Compute Project (OCP) and Open Rack v3 (ORV3) specifications. It employs the company’s 650-V GaNSafe and 650-V Gen-3 Fast SiC MOSFETs configured in 3-phase interleaved PFC and LLC topologies.
According to Navitas, the shift to a 3-phase topology for both PFC and LLC enables the industry’s lowest ripple current and EMI. The power supply also reduces the number of GaN and SiC devices by 25% compared to the nearest competing system, reducing overall cost.
Specifications for the PSU include an input voltage range of 180 V to 264 V, a standby output voltage of 12 V, and an operating temperature range of -5°C to +45°C. Its hold-up time at 8.5 kW is 10 ms, with 20 ms possible through an extender.
Navitas will debut the 8.5-kW power supply design at electronica 2024.
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