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Infineon expands GaN transistor portfolio

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Infineon has launched the CoolGaN Drive family, featuring single switches and half-bridges with integrated drivers for compact, efficient designs. The family includes CoolGaN Drive 700-V G5 single switches, which integrate a transistor and gate driver in PQFN 5×6 and PQFN 6×8 packages. It also offers CoolGaN Drive HB 600-V G5 devices, which combine two transistors with high-side and low-side gate drivers in a LGA 6×8 package.

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Depending on the product group, CoolGaN Drive components include a bootstrap diode, loss-free current measurement, and adjustable dV/dt. They also provide overcurrent, overtemperature, and short-circuit protection.

These devices support higher switching frequencies, leading to smaller, more efficient systems with reduced BoM, lower weight, and a smaller carbon footprint. The GaN HEMTs are suitable for longer-range e-bikes, portable power tools, and lighter-weight household appliances, such as vacuums, fans, and hairdryers.

Samples of the half-bridge devices are available now. Single-switch samples will be available starting Q4 2024. For more information about Infineon’s GaN HEMT lineup, click here.

Infineon Technologies 

Find more datasheets on products like this one at Datasheets.com, searchable by category, part #, description, manufacturer, and more.

The post Infineon expands GaN transistor portfolio appeared first on EDN.


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